The effect of peak firing temperature and grid width on the contact properties between Ag metal and silicon (n+ emitter) was investigated for screen-printed silicon solar cells. We confirmed the factors that control the specific contact resistance as follows: (1) the Ag coverage fraction on the silicon surface, d(2) the thickness of the glass layer and (3) the etching depth on the n+ emitter region. The lowest specific contact resistance (8.27 mΩ x cm2) was obtained at the optimum firing temperature (720 degrees C). We also found that the grid width affected the contact quality of Ag paste because the contact width related to the absorbed heat of samples in RTP system. For this reason, when the grid width was further reduced, meaning more heat absorption, more Ag crystallites grew and the glass layer thickened. Light I-V results of a 6-inch silicon solar cell with minimum busbar width were similar to the PC1D simulation results. The efficiency was improved by 0.2% with the reduction of the busbar width.