Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures

Joohee Kim; Mi-Sun Lee; Sangbin Jeon; Minji Kim; Sungwon Kim; Kukjoo Kim; Franklin Bien; Sung You Hong; Jang-Ung Park

doi:10.1002/adma.201500710

Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures

Adv Mater. 2015 Jun 3;27(21):3292-7. doi: 10.1002/adma.201500710. Epub 2015 Apr 17.

Authors

Joohee Kim¹, Mi-Sun Lee¹, Sangbin Jeon², Minji Kim¹, Sungwon Kim¹, Kukjoo Kim¹, Franklin Bien³, Sung You Hong², Jang-Ung Park¹

Affiliations

¹ School of Materials Science and Engineering, Wearable Electronics Research Group, Low-Dimensional Carbon Materials Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798, Republic of Korea.
² School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798, Republic of Korea.
³ School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 689-798, Republic of Korea.

PMID: 25885929
DOI: 10.1002/adma.201500710

Abstract

Transparent and stretchable electronics with remarkable bendability, conformability, and lightness are the key attributes for sensing or wearable devices. Transparent and stretchable field-effect transistor sensors using graphene-metal nanowire hybrid nanostructures have high mobility (≈3000 cm(2) V(-1) s(-1) ) with low contact resistance, and they are transferrable onto a variety of substrates. The integration of these sensors for RLC circuits enables wireless monitoring.

Keywords: field-effect transistors; graphene; hybrid; nanowires; wearable electronics.