Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Shih-Wei Lin; Yue-Han Wu; Li Chang; Chi-Te Liang; Sheng-Di Lin

doi:10.1186/s11671-015-0782-x

Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Nanoscale Res Lett. 2015 Feb 18:10:71. doi: 10.1186/s11671-015-0782-x. eCollection 2015.

Authors

Shih-Wei Lin¹, Yue-Han Wu², Li Chang², Chi-Te Liang³, Sheng-Di Lin¹

Affiliations

¹ Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010 Taiwan.
² Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010 Taiwan.
³ Department of Physics, National Taiwan University, Taipei, 10617 Taiwan ; Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA 94305 USA.

Abstract

We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

Keywords: Pure electron-electron dephasing; Ultrathin metal films; Weak anti-localization.