High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

Zhe Chen; Feifei Zhang; Bing Chen; Yang Zheng; Bin Gao; Lifeng Liu; Xiaoyan Liu; Jinfeng Kang

doi:10.1186/s11671-015-0738-1

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

Nanoscale Res Lett. 2015 Feb 18:10:70. doi: 10.1186/s11671-015-0738-1. eCollection 2015.

Authors

Zhe Chen¹, Feifei Zhang¹, Bing Chen¹, Yang Zheng¹, Bin Gao¹, Lifeng Liu¹, Xiaoyan Liu¹, Jinfeng Kang¹

Affiliation

¹ Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.

Abstract

Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

Keywords: Atomic layer deposition (ALD); Cross-point array; RRAM.