Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).
Keywords: Ferroelectricity; Hf0.5Zr0.5O2; Phase transition; Ru.