Strongly bias-dependent tunnel magnetoresistance in manganite spin filter tunnel junctions

Bhagwati Prasad; Wenrui Zhang; Jie Jian; Haiyan Wang; Mark G Blamire

doi:10.1002/adma.201405147

Strongly bias-dependent tunnel magnetoresistance in manganite spin filter tunnel junctions

Adv Mater. 2015 May 20;27(19):3079-84. doi: 10.1002/adma.201405147. Epub 2015 Apr 7.

Authors

Bhagwati Prasad¹, Wenrui Zhang², Jie Jian², Haiyan Wang², Mark G Blamire¹

Affiliations

¹ Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.
² Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas, 77843-3128, USA.

PMID: 25845706
DOI: 10.1002/adma.201405147

Abstract

A highly unconventional bias-dependent tunnel magnetoresistance (TMR) response is observed in Sm0.75 Sr0.25 MnO3 -based nanopillar spin filter tunnel junctions (SFTJs) with two different behaviors in two different thickness regimes of the barrier layer. Thinner barrier devices exhibit conventional SFTJ behaviors; however, for larger barrier thicknesses, the TMR-bias dependence is more complex and reverses sign at higher bias.

Keywords: Coulomb blockade; Fowler-Nordheim tunneling; manganites; spin filter; tunnel magnetoresistance.