Mode-locked Tm,Ho:KLu(WO(4))(2) laser at 2060 nm using InGaSb-based SESAMs

Veselin Aleksandrov; Alexander Gluth; Valentin Petrov; Ivan Buchvarov; Günter Steinmeyer; Jonna Paajaste; Soile Suomalainen; Antti Härkönen; Mircea Guina; Xavier Mateos; Francesc Díaz; Uwe Griebner

doi:10.1364/OE.23.004614

Mode-locked Tm,Ho:KLu(WO(4))(2) laser at 2060 nm using InGaSb-based SESAMs

Opt Express. 2015 Feb 23;23(4):4614-9. doi: 10.1364/OE.23.004614.

Authors

Veselin Aleksandrov, Alexander Gluth, Valentin Petrov, Ivan Buchvarov, Günter Steinmeyer, Jonna Paajaste, Soile Suomalainen, Antti Härkönen, Mircea Guina, Xavier Mateos, Francesc Díaz, Uwe Griebner

PMID: 25836498
DOI: 10.1364/OE.23.004614

Abstract

Passive mode-locking of a Tm,Ho:KLu(WO(4))(2) laser operating at 2060 nm using different designs of InGaAsSb quantum-well based semiconductor saturable absorber mirrors (SESAMs) is demonstrated. The self-starting mode-locked laser delivers pulse durations between 4 and 8 ps at a repetition rate of 93 MHz with maximum average output power of 155 mW. Mode-locking performance of a Tm,Ho:KLu(WO(4))(2) laser is compared for usage of a SESAM to a single-walled carbon nanotube saturable absorber.