Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor

Tibor Izak; Marie Krátká; Alexander Kromka; Bohuslav Rezek

doi:10.1016/j.colsurfb.2015.03.035

Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor

Colloids Surf B Biointerfaces. 2015 May 1:129:95-9. doi: 10.1016/j.colsurfb.2015.03.035. Epub 2015 Mar 21.

Authors

Tibor Izak¹, Marie Krátká², Alexander Kromka², Bohuslav Rezek²

Affiliations

¹ Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic. Electronic address: izak@fzu.cz.
² Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.

PMID: 25835144
DOI: 10.1016/j.colsurfb.2015.03.035

Abstract

We show the influence of osteoblastic SAOS-2 cells on the transfer characteristics of nanocrystalline diamond solution-gated field-effect transistors (SGFET) prepared on glass substrates. Channels of these fully transparent SGFETs are realized by hydrogen termination of undoped diamond film. After cell cultivation, the transistors exhibit about 100× increased leakage currents (up to 10nA). During and after the cell delamination, the transistors return to original gate currents. We propose a mechanism where this triggering effect is attributed to ions released from adhered cells, which depends on the cell adhesion morphology, and could be used for cell culture monitoring.

Keywords: Field-effect transistors; Leakage currents; Nanocrystalline diamond; Osteoblastic cells.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Action Potentials*
Biosensing Techniques / instrumentation*
Bone Neoplasms*
Cell Adhesion*
Diamond / chemistry*
Humans
Ions
Osteosarcoma*
Transistors, Electronic*
Tumor Cells, Cultured

Substances

Ions
Diamond