Correction to tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition
ACS Appl Mater Interfaces
.
2015 Apr 8;7(13):7445.
doi: 10.1021/acsami.5b02372.
Epub 2015 Mar 30.
Authors
Young-Chul Byun
,
Sungho Choi
,
Youngseo An
,
Paul C McIntyre
,
Hyoungsub Kim
PMID:
25823007
DOI:
10.1021/acsami.5b02372
No abstract available
Publication types
Published Erratum