Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors

Steve Park; Gregory Pitner; Gaurav Giri; Ja Hoon Koo; Joonsuk Park; Kwanpyo Kim; Huiliang Wang; Robert Sinclair; H-S Philip Wong; Zhenan Bao

doi:10.1002/adma.201405289

Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors

Adv Mater. 2015 Apr 24;27(16):2656-62. doi: 10.1002/adma.201405289. Epub 2015 Mar 18.

Authors

Steve Park¹, Gregory Pitner, Gaurav Giri, Ja Hoon Koo, Joonsuk Park, Kwanpyo Kim, Huiliang Wang, Robert Sinclair, H-S Philip Wong, Zhenan Bao

Affiliation

¹ Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, CA, 94305-4034, USA.

PMID: 25788393
DOI: 10.1002/adma.201405289

Abstract

Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micro-meter is achieved with a current density of 10.08 μA μm(-1) at VDS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes.

Keywords: alignment; assembly; carbon nanotubes; patterning; transistors.