Improved organic field-effect transistor (OFET) performance through a polymer-oligomer semiconductor blend approach is demonstrated. Incorporation of 2,5-bis(3-dodecylthiophen-2-yl)thieno[3,2-b]thiophene (BTTT) into poly(3-hexylthiophene) (P3HT) thin films leads to approximately a 5-fold increase in charge carrier mobility, a 10-fold increase in current on-off ratio, and concomitantly, a decreased threshold voltage to as low as 1.7 V in comparison to single component thin films. The blend approach required no pre- and/or post treatments, and processing was conducted under ambient conditions. The correlation of crystallinity, surface morphology and photophysical properties of the blend thin films was systematically investigated via X-ray diffraction, atomic force microscopy and optical absorption measurements respectively, as a function of blend composition. The dependence of thin-film morphology on the blend composition is illustrated for the P3HT:BTTT system. The blend approach provides an alternative avenue to combine the advantageous properties of conjugated polymers and oligomers for optimized semiconductor performance.
Keywords: charge transport; organic field effect transistors; poly(3-hexylthiophene); polymer-oligomer blend; threshold voltage.