Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Yunzhong Chen; Felix Trier; Takeshi Kasama; Dennis V Christensen; Nicolas Bovet; Zoltan I Balogh; Han Li; Karl Tor Sune Thydén; Wei Zhang; Sadegh Yazdi; Poul Norby; Nini Pryds; Søren Linderoth

doi:10.1021/nl504622w

Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Nano Lett. 2015 Mar 11;15(3):1849-54. doi: 10.1021/nl504622w. Epub 2015 Feb 20.

Authors

Yunzhong Chen¹, Felix Trier, Takeshi Kasama, Dennis V Christensen, Nicolas Bovet, Zoltan I Balogh, Han Li, Karl Tor Sune Thydén, Wei Zhang, Sadegh Yazdi, Poul Norby, Nini Pryds, Søren Linderoth

Affiliation

¹ Department of Energy Conversion and Storage, Technical University of Denmark , Risø Campus, 4000 Roskilde, Denmark.

PMID: 25692804
DOI: 10.1021/nl504622w

Abstract

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp and exhibits a high electron mobility exceeding 60,000 cm(2) V(-1) s(-1) at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.

Keywords: Complex oxide interfaces; oxide electronics; strain induced polarization; two-dimensional electron gases.

Publication types

Research Support, Non-U.S. Gov't