Here we describe a strategy to fabricate multifunctional graphene-polymer hybrid thin-film transistors (PG-TFT) whose transport properties are tunable by varying the deposition conditions of liquid-phase exfoliated graphene (LPE-G) dispersions onto a dielectric surface and via thermal annealing post-treatments. In particular, the ionization energy (IE) of the LPE-G drop-cast on SiO2 can be finely adjusted prior to polymer deposition via thermal annealing in air environment, exhibiting values gradually changing from 4.8 eV up to 5.7 eV. Such a tunable graphene's IE determines dramatically different electronic interactions between the LPE-G and the semiconducting polymer (p- or n-type) sitting on its top, leading to devices where the output current of the PG-TFT can be operated from being completely turned off up to modulable. In fact upon increasing the surface coverage of graphene nanoflakes on the SiO2 the charge transport properties within the top polymer layer are modified from being semiconducting up to truly conductive (graphite-like). Significantly, when the IE of LPE-G is outside the polymer band gap, the PG-TFT can operate as a multifunctional three terminal switch (transistor) and/or memory device featuring high number of erase-write cycles. Our PG-TFT, based on a fine energy level engineering, represents a memory device operating without the need of a dielectric layer separating a floating gate from the active channel.
Keywords: graphene; hybrid material; memory device; multifunctionality; organic thin-film transistor.