Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures

Junyeon Kwon; Young Ki Hong; Gyuchull Han; Inturu Omkaram; Woong Choi; Sunkook Kim; Youngki Yoon

doi:10.1002/adma.201404367

Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures

Adv Mater. 2015 Apr 1;27(13):2224-30. doi: 10.1002/adma.201404367. Epub 2015 Feb 13.

Authors

Junyeon Kwon¹, Young Ki Hong, Gyuchull Han, Inturu Omkaram, Woong Choi, Sunkook Kim, Youngki Yoon

Affiliation

¹ Multi-Functional Nano/Bio Electronics Lab, Kyung Hee University, Gyeonggi, 446-701, South Korea.

PMID: 25676825
DOI: 10.1002/adma.201404367

Abstract

Local-gate multilayer MoS2 phototransistors exhibit a photoresponsivity of up to 342.6 A W(-1) , which is higher by 3 orders of magnitude than that of global-gate multilayer MoS2 phototransistors. These simulations indicate that the gate underlap is critical for the enhancement of the photoresponsivity. These results suggest that high photoresponsivity can be achieved in indirect-bandgap multilayer MoS2 phototransistors by optimizing the optoelectronic design.

Keywords: MoS2; local-bottom gated structure; phototransistors; responsivity; transition metal dichalcogenide.