Stable low-voltage operation top-gate organic field-effect transistors on cellulose nanocrystal substrates

Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P Youngblood; Robert J Moon; Bernard Kippelen

doi:10.1021/am508723a

Stable low-voltage operation top-gate organic field-effect transistors on cellulose nanocrystal substrates

ACS Appl Mater Interfaces. 2015 Mar 4;7(8):4804-8. doi: 10.1021/am508723a. Epub 2015 Feb 18.

Authors

Cheng-Yin Wang¹, Canek Fuentes-Hernandez, Jen-Chieh Liu, Amir Dindar, Sangmoo Choi, Jeffrey P Youngblood, Robert J Moon, Bernard Kippelen

Affiliation

¹ Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.

PMID: 25651811
DOI: 10.1021/am508723a

Abstract

We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal-glycerol (CNC/glycerol) substrates. These OFETs exhibit low operating voltage, low threshold voltage, an average field-effect mobility of 0.11 cm(2)/(V s), and good shelf and operational stability in ambient conditions. To improve the operational stability in ambient a passivation layer of Al2O3 is grown by atomic layer deposition (ALD) directly onto the CNC/glycerol substrates. This layer protects the organic semiconductor layer from moisture and other chemicals that can either permeate through or diffuse out of the substrate.

Keywords: ambient stability; cellulose; low-voltage; organic field-effect transistor; top-gate geometry.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.