Generation of ensembles of individually resolvable nitrogen vacancies using nanometer-scale apertures in ultrahigh-aspect ratio planar implantation masks

Igal Bayn; Edward H Chen; Matthew E Trusheim; Luozhou Li; Tim Schröder; Ophir Gaathon; Ming Lu; Aaron Stein; Mingzhao Liu; Kim Kisslinger; Hannah Clevenson; Dirk Englund

doi:10.1021/nl504441m

Generation of ensembles of individually resolvable nitrogen vacancies using nanometer-scale apertures in ultrahigh-aspect ratio planar implantation masks

Nano Lett. 2015 Mar 11;15(3):1751-8. doi: 10.1021/nl504441m. Epub 2015 Feb 6.

Authors

Igal Bayn¹, Edward H Chen, Matthew E Trusheim, Luozhou Li, Tim Schröder, Ophir Gaathon, Ming Lu, Aaron Stein, Mingzhao Liu, Kim Kisslinger, Hannah Clevenson, Dirk Englund

Affiliation

¹ Department of Electrical Engineering and Computer Science, and Research Lab of Electronics, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Building 36-575, Cambridge, Massachusetts 02139, United States.

PMID: 25621759
DOI: 10.1021/nl504441m

Abstract

A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below ∼20 nm to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with a thickness of 270 nm and feature sizes down to ∼1 nm. Super-resolution imaging resolves NVs with a full-width maximum distribution of 26 ± 7 nm and a distribution of NV-NV separations of 16 ± 5 nm.

Keywords: diamond color centers; implantation mask; nanoaperture; nitrogen vacancy; quantum computing; spin chain.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.