Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor

Steve Park; Soo Jin Kim; Ji Hyun Nam; Gregory Pitner; Tae Hoon Lee; Alexander L Ayzner; Huiliang Wang; Scott W Fong; Michael Vosgueritchian; Young Jun Park; Mark L Brongersma; Zhenan Bao

doi:10.1002/adma.201404544

Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor

Adv Mater. 2015 Jan 27;27(4):759-65. doi: 10.1002/adma.201404544. Epub 2014 Dec 8.

Authors

Steve Park¹, Soo Jin Kim, Ji Hyun Nam, Gregory Pitner, Tae Hoon Lee, Alexander L Ayzner, Huiliang Wang, Scott W Fong, Michael Vosgueritchian, Young Jun Park, Mark L Brongersma, Zhenan Bao

Affiliation

¹ Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, CA, 94305-4034, USA.

PMID: 25607919
DOI: 10.1002/adma.201404544

Abstract

A highly sensitive single-walled carbon nanotube/C60 -based infrared photo-transistor is fabricated with a responsivity of 97.5 A W(-1) and detectivity of 1.17 × 10(9) Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10(4) with a response time of several milliseconds.

Keywords: carbon nanotubes; fullerene; photodetectors; transistors.