Self-assembled metallic nanowire-based vertical organic field-effect transistor

Ariel J Ben-Sasson; Daniel Azulai; Hagit Gilon; Antonio Facchetti; Gil Markovich; Nir Tessler

doi:10.1021/am505174p

Self-assembled metallic nanowire-based vertical organic field-effect transistor

ACS Appl Mater Interfaces. 2015 Feb 4;7(4):2149-52. doi: 10.1021/am505174p. Epub 2015 Jan 23.

Authors

Ariel J Ben-Sasson¹, Daniel Azulai, Hagit Gilon, Antonio Facchetti, Gil Markovich, Nir Tessler

Affiliation

¹ Sara and Moshe Zisapel Nano-Electronics Center, Department of Electrical Engineering, Technion-Israel Institute of Technology , Haifa 3200, Israel.

PMID: 25602371
DOI: 10.1021/am505174p

Abstract

We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires' microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio ∼1 × 10(5) and high current density (>1 mA cm(-2) at VDS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.

Keywords: nanowires; organic electronics; self-assembly; transparent electrodes; vertical FETs.

Publication types

Research Support, Non-U.S. Gov't