Nanometer-resolved mechanical properties around GaN crystal surface steps

Beilstein J Nanotechnol. 2014 Nov 19:5:2164-70. doi: 10.3762/bjnano.5.225. eCollection 2014.

Abstract

The mechanical properties of surfaces and nanostructures deviate from their bulk counterparts due to surface stress and reduced dimensionality. Experimental indentation-based techniques present the challenge of measuring these effects, while avoiding artifacts caused by the measurement technique itself. We performed a molecular dynamics study to investigate the mechanical properties of a GaN step of only a few lattice constants step height and scrutinized its applicability to indentation experiments using a finite element approach (FEM). We show that the breakdown of half-space symmetry leads to an "artificial" reduction of the elastic properties of comparable lateral dimensions which overlays the effect of surface stress. Contact resonance atomic force microscopy (CR-AFM) was used to compare the simulation results with experiments.

Keywords: finite elements; gallium nitride; indentation; mechanical properties; molecular dynamics; nanostructures.