Graphene nanoribbon field-effect transistor at high bias

Mahdiar Ghadiry; Razali Ismail; Mehdi Saeidmanesh; Mohsen Khaledian; Asrulnizam Abd Manaf

doi:10.1186/1556-276X-9-604

Graphene nanoribbon field-effect transistor at high bias

Nanoscale Res Lett. 2014 Nov 6;9(1):604. doi: 10.1186/1556-276X-9-604. eCollection 2014.

Authors

Mahdiar Ghadiry¹, Razali Ismail¹, Mehdi Saeidmanesh¹, Mohsen Khaledian¹, Asrulnizam Abd Manaf²

Affiliations

¹ Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor Darul Takzim 81310, Malaysia.
² School of Electrical and Electronic Engineering, Univesiti Sains Malaysia, Pulau Pinang 14300, Malaysia.

Abstract

Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.

Keywords: Breakdown; Current; Fabrication; Graphene; High bias; Model.