A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory

Mu-Shih Yeh; Yung-Chun Wu; Kuan-Cheng Liu; Ming-Hsien Chung; Yi-Ruei Jhan; Min-Feng Hung; Lun-Chun Chen

doi:10.1186/1556-276X-9-603

A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory

Nanoscale Res Lett. 2014 Nov 6;9(1):603. doi: 10.1186/1556-276X-9-603. eCollection 2014.

Authors

Mu-Shih Yeh¹, Yung-Chun Wu¹, Kuan-Cheng Liu¹, Ming-Hsien Chung¹, Yi-Ruei Jhan¹, Min-Feng Hung¹, Lun-Chun Chen¹

Affiliation

¹ Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.

Abstract

This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, with a memory window maintained 2 V after 10(4) s. By extrapolation, 95% of the original charge can be stored for 10 years. In the future, this device will be applied to multi-layer Si ICs in fully functional systems on panels, active-matrix liquid-crystal displays, and three-dimensional (3D) stacked flash memory.

Keywords: Fin field-effect transistor; Flash memory; Gate-all-around; Junctionless; Nonvolatile memory; One-time programming; Single poly-Si; Three-dimensional.