Room-temperature ferroelectricity in hexagonal TbMnO3 thin films

Dong Jik Kim; Tula R Paudel; Haidong Lu; John D Burton; John G Connell; Evgeny Y Tsymbal; S S Ambrose Seo; Alexei Gruverman

doi:10.1002/adma.201403301

Room-temperature ferroelectricity in hexagonal TbMnO3 thin films

Adv Mater. 2014 Dec 3;26(45):7660-5. doi: 10.1002/adma.201403301. Epub 2014 Oct 18.

Authors

Dong Jik Kim¹, Tula R Paudel, Haidong Lu, John D Burton, John G Connell, Evgeny Y Tsymbal, S S Ambrose Seo, Alexei Gruverman

Affiliation

¹ Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.

PMID: 25327617
DOI: 10.1002/adma.201403301

Abstract

Piezoresponse force microscopy imaging in conjunction with first-principles calculations provide strong evidence for room-temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain-engineered using epitaxial growth.

Keywords: ferroelectricity; hexagonal rare-earth manganites; resistive switching; strain-engineering.