Near-infrared optical absorption enhanced in black silicon via Ag nanoparticle-induced localized surface plasmon

Peng Zhang; Shibin Li; Chunhua Liu; Xiongbang Wei; Zhiming Wu; Yadong Jiang; Zhi Chen

doi:10.1186/1556-276X-9-519

Near-infrared optical absorption enhanced in black silicon via Ag nanoparticle-induced localized surface plasmon

Nanoscale Res Lett. 2014 Sep 22;9(1):519. doi: 10.1186/1556-276X-9-519. eCollection 2014.

Authors

Peng Zhang¹, Shibin Li¹, Chunhua Liu¹, Xiongbang Wei¹, Zhiming Wu¹, Yadong Jiang¹, Zhi Chen²

Affiliations

¹ State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
² State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China ; Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA.

Abstract

Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). The black silicon with Ag nanoparticles shows much higher absorption than black silicon fabricated by chemical etching or reactive ion etching over ultraviolet to near-infrared (UV-VIS-NIR, 250 to 2,500 nm). The maximum absorption even increased up to 93.6% in the NIR range (820 to 2,500 nm). The high absorption in NIR range makes LSP-enhanced black silicon a potential material used for NIR-sensitive optoelectronic device.

Pacs: 78.67.Bf; 78.30.Fs; 78.40.-q; 42.70.Gi.

Keywords: Absorption; Ag nanoparticles; Black silicon; Chemical etching; LSP.