Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

Jiangwei Liu; Meiyong Liao; Masataka Imura; Akihiro Tanaka; Hideo Iwai; Yasuo Koide

doi:10.1038/srep06395

Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

Sci Rep. 2014 Sep 22:4:6395. doi: 10.1038/srep06395.

Authors

Jiangwei Liu¹, Meiyong Liao², Masataka Imura², Akihiro Tanaka³, Hideo Iwai³, Yasuo Koide⁴

Affiliations

¹ International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
² Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
³ Materials Analysis Station, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
⁴ 1] Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan [2] Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan [3] Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.

Abstract

Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO2 layer on the diamond for the MISFETs. The k value for ZrO2 is determined by capacitance-voltage characteristic to be 15.4. The leakage current density is smaller than 4.8 × 10(-5) A · cm(-2) for the gate voltage ranging from -4.0 to 2.0 V. The low on-resistance MISFET is obtained by eliminating source/drain-channel interspaces, which shows a large current output and a high extrinsic transconductance. The high-performance diamond MISFET fabrication will push forward the development of power devices.

Publication types

Research Support, Non-U.S. Gov't