Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors

Xingqiang Liu; Xi Liu; Jingli Wang; Chongnan Liao; Xiangheng Xiao; Shishang Guo; Changzhong Jiang; Zhiyong Fan; Ti Wang; Xiaoshuang Chen; Wei Lu; Weida Hu; Lei Liao

doi:10.1002/adma.201401732

Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors

Adv Mater. 2014 Nov 19;26(43):7399-404. doi: 10.1002/adma.201401732. Epub 2014 Sep 18.

Authors

Xingqiang Liu¹, Xi Liu, Jingli Wang, Chongnan Liao, Xiangheng Xiao, Shishang Guo, Changzhong Jiang, Zhiyong Fan, Ti Wang, Xiaoshuang Chen, Wei Lu, Weida Hu, Lei Liao

Affiliation

¹ Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.

PMID: 25236580
DOI: 10.1002/adma.201401732

Abstract

A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon.

Keywords: InGaZnO; composite materials; nanowires; phototransistors; thin films; thin-film transistors.