Charge offset stability in Si single electron devices with Al gates

Neil M Zimmerman; Chih-Hwan Yang; Nai Shyan Lai; Wee Han Lim; Andrew S Dzurak

doi:10.1088/0957-4484/25/40/405201

Charge offset stability in Si single electron devices with Al gates

Nanotechnology. 2014 Oct 10;25(40):405201. doi: 10.1088/0957-4484/25/40/405201. Epub 2014 Sep 12.

Authors

Neil M Zimmerman¹, Chih-Hwan Yang, Nai Shyan Lai, Wee Han Lim, Andrew S Dzurak

Affiliation

¹ National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.

PMID: 25213165
DOI: 10.1088/0957-4484/25/40/405201

Abstract

We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 e) is intermediate between that of Al/AlO(x)/Al tunnel junctions (greater than 1 e) and Si SEDs defined with Si gates (0.01 e). This range of values suggests that defects in the AlO(x) are the main cause of the charge offset drift instability.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.