Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Kexiong Zhang; Hongwei Liang; Yang Liu; Rensheng Shen; Wenping Guo; Dongsheng Wang; Xiaochuan Xia; Pengcheng Tao; Chao Yang; Yingmin Luo; Guotong Du

doi:10.1038/srep06322

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Sci Rep. 2014 Sep 10:4:6322. doi: 10.1038/srep06322.

Authors

Affiliations

¹ 1] School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China [2].
² School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China.
³ Jiangsu Xinguanglian Technology Co., Ltd., Wuxi 214192, China.
⁴ 1] School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China [2] State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun 130012, China.

Abstract

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the reverse bias of -1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.

Publication types

Research Support, Non-U.S. Gov't