We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz(0.5). Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.
Keywords: CVD graphene; Graphene field effect transistors; antenna-integrated detectors; direct terahertz detection; distributed resistive self-mixing.