Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation

Gim Heng Tan; Roslina Mohd Sidek; Harikrishnan Ramiah; Wei Keat Chong; De Xing Lioe

doi:10.1155/2014/163414

Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation

ScientificWorldJournal. 2014:2014:163414. doi: 10.1155/2014/163414. Epub 2014 Aug 14.

Authors

Gim Heng Tan¹, Roslina Mohd Sidek², Harikrishnan Ramiah³, Wei Keat Chong³, De Xing Lioe²

Affiliations

¹ Department of Electrical and Electronic Engineering, Universiti Putra Malaysia, 43400 Serdang, Malaysia ; Department of Electrical and Electronic Engineering, Segi University, 47810 Petaling Jaya, Selangor, Malaysia.
² Department of Electrical and Electronic Engineering, Universiti Putra Malaysia, 43400 Serdang, Malaysia.
³ Department of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia.

Abstract

This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2).

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Computer Storage Devices*
Equipment Design / methods*
Semiconductors*
Signal Processing, Computer-Assisted / instrumentation*
Wireless Technology / instrumentation*