Defects in GaSe grown by Bridgman method

K A Kokh; V V Atuchin; T A Gavrilova; A Kozhukhov; E A Maximovskiy; L D Pokrovsky; A R Tsygankova; A I Saprykin

doi:10.1111/jmi.12174

Defects in GaSe grown by Bridgman method

J Microsc. 2014 Dec;256(3):208-12. doi: 10.1111/jmi.12174. Epub 2014 Sep 2.

Authors

K A Kokh¹, V V Atuchin, T A Gavrilova, A Kozhukhov, E A Maximovskiy, L D Pokrovsky, A R Tsygankova, A I Saprykin

Affiliation

¹ Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia; Novosibirsk State University, Novosibirsk, Russia; Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia.

PMID: 25182595
DOI: 10.1111/jmi.12174

Abstract

Optical quality GaSe crystals have been grown by vertical Bridgman method. The structural properties and micromorphology of a cleaved GaSe(001) surface have been evaluated by RHEED, SEM and AFM. The cleaved GaSe(001) is atomically flat with as low roughness as ∼0.06 nm excepting local hillock type defects. The hillock-type formations are round-shaped with a bottom diameter of ∼200 nm and a height of ∼20-35 nm. The drastic depletion of the hillock material by gallium has been indicated by EDX measurements.

Keywords: AFM; GaSe; RHEED; SEM; crystal growth.

Publication types

Research Support, Non-U.S. Gov't