Electronic wastewater from a semiconductor plant was treated with a pilot-scale four-stage Bardenpho process with membrane system. The system was operated over a 14-month period with an overall hydraulic retention time (HRT) ranging from 9.5 to 30 h. With a few exceptions, the pilot plant consistently treated the electronic wastewater with an average removal efficiency of chemical oxygen demand (COD) and total nitrogen of 97% and 93%, respectively, and achieving effluent quality of COD<15 mg/L, turbidity<1, and silt density index<1. Based on removal efficiencies of the pilot plant, it is possible to lower the HRT to less than 9.5 h to achieve comparable removal efficiencies. An energy-saving configuration where an internal recycle line was omitted and the biomass recycle was rerouted to the pre-anoxic tank, can reduce energy consumption by 8.6% and gave removal efficiencies that were similar to the Bardenpho process. The system achieved pre-anoxic and post-anoxic specific denitrification rate values with a 95% confidence interval of 0.091 ± 0.011 g NO₃-N/g MLVSS d and 0.087 ± 0.016 g NO₃-N/g MLVSS d, respectively. The effluent from the four-stage Bardenpho with membrane system can be paired with a reverse osmosis system to provide further treatment for reuse purposes.
Keywords: four-stage Bardenpho; hydraulic retention time; membrane; semiconductor; specific denitrification rate.