High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter

Jeehwan Kim; Homare Hiroi; Teodor K Todorov; Oki Gunawan; Masaru Kuwahara; Tayfun Gokmen; Dhruv Nair; Marinus Hopstaken; Byungha Shin; Yun Seog Lee; Wei Wang; Hiroki Sugimoto; David B Mitzi

doi:10.1002/adma.201402373

High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter

Adv Mater. 2014 Nov 26;26(44):7427-31. doi: 10.1002/adma.201402373. Epub 2014 Aug 25.

Authors

Jeehwan Kim¹, Homare Hiroi, Teodor K Todorov, Oki Gunawan, Masaru Kuwahara, Tayfun Gokmen, Dhruv Nair, Marinus Hopstaken, Byungha Shin, Yun Seog Lee, Wei Wang, Hiroki Sugimoto, David B Mitzi

Affiliation

¹ IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA.

PMID: 25155874
DOI: 10.1002/adma.201402373

Abstract

High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV.

Keywords: CZTSSe; doping concentration; double emitter; indium sulfide; solar cells.