Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s

Wenbin Zhang; Cheng Wang; Gang Liu; Jun Wang; Yu Chen; Run-Wei Li

doi:10.1039/c4cc05233a

Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s

Chem Commun (Camb). 2014 Oct 9;50(78):11496-9. doi: 10.1039/c4cc05233a.

Authors

Wenbin Zhang¹, Cheng Wang, Gang Liu, Jun Wang, Yu Chen, Run-Wei Li

Affiliation

¹ Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China. liug@nimte.ac.cn runweili@nimte.ac.cn.

PMID: 25131749
DOI: 10.1039/c4cc05233a

Abstract

Linear and hyperbranched poly(azomethine)s (PAMs)-based on triphenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Comparably, the hyperbranched PAM with isotropic architecture and semi-crystalline nature shows enhanced memory behaviors with more uniform distribution of the HRS and LRS resistances.