Multiscale modeling of the electrostatic impact of self-assembled monolayers used as gate dielectric treatment in organic thin-film transistors

Alexander Mityashin; Otello Maria Roscioni; Luca Muccioli; Claudio Zannoni; Victor Geskin; Jérôme Cornil; Dimitri Janssen; Soeren Steudel; Jan Genoe; Paul Heremans

doi:10.1021/am503873f

Multiscale modeling of the electrostatic impact of self-assembled monolayers used as gate dielectric treatment in organic thin-film transistors

ACS Appl Mater Interfaces. 2014 Sep 10;6(17):15372-8. doi: 10.1021/am503873f. Epub 2014 Aug 22.

Authors

Alexander Mityashin¹, Otello Maria Roscioni, Luca Muccioli, Claudio Zannoni, Victor Geskin, Jérôme Cornil, Dimitri Janssen, Soeren Steudel, Jan Genoe, Paul Heremans

Affiliation

¹ Large Area Electronics, Imec , Kapeldreef 75, Leuven 3001, Belgium.

PMID: 25119143
DOI: 10.1021/am503873f

Abstract

This study sheds light on the microscopic mechanisms by which self-assembled monolayers (SAMs) determine the onset voltage in organic thin-film transistors (OTFTs). Experiments and modeling are combined to investigate the self-assembly and electrostatic interaction processes in prototypical OTFT structures (SiO2/SAM/pentacene), where alkylated and fluoroalkylated silane SAMs are compared. The results highlight the coverage-dependent impact of the SAM on the density of semiconductor states and enable the rationalization and the control of the OTFT characteristics.

Keywords: coverage; electrostatic disorder; microelectrostatic model; molecular dynamics; onset voltage; pentacene.

Publication types

Research Support, Non-U.S. Gov't