Synergetic effect of Zn substitution on the electron and phonon transport in Mg2Si0.5Sn0.5-based thermoelectric materials

Hongli Gao; Tiejun Zhu; Xinbing Zhao; Yuan Deng

doi:10.1039/c4dt01734j

Synergetic effect of Zn substitution on the electron and phonon transport in Mg2Si0.5Sn0.5-based thermoelectric materials

Dalton Trans. 2014 Oct 7;43(37):14072-8. doi: 10.1039/c4dt01734j. Epub 2014 Aug 14.

Authors

Hongli Gao¹, Tiejun Zhu, Xinbing Zhao, Yuan Deng

Affiliation

¹ State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China. zhaoxb@zju.edu.cn dengyuan@buaa.edu.cn.

PMID: 25118956
DOI: 10.1039/c4dt01734j

Abstract

Mg2Si1-xSnx alloys are a prospective material for thermoelectric generators at moderate temperatures. The thermoelectric properties of Mg2Si0.5Sn0.5-based thermoelectric materials with only Zn substitution or Zn/Sb co-doping were investigated. Isoelectronic Zn substitution did not affect the carrier concentration, but improved the carrier mobility. Zn atoms incorporated into a Sb-doped Mg2Si0.5Sn0.5 matrix simultaneously boosted the power factor and suppressed the lattice thermal conductivity, leading to an enhancement of the thermoelectric figure of merit ZT of the resulting bulk materials. The interplay between the electron and phonon transport of Mg2Si0.5Sn0.49Sb0.01 substituted with Zn at Mg sites results in an enhancement of the ZT by 25% at ∼730 K, from ZT≈ 0.8 in Mg2Si0.5Sn0.49Sb0.01 to ZT≈ 1.0 in Mg1.98Zn0.02Si0.5Sn0.49Sb0.01. Solid solutions in the Mg2Si-Mg2Sn system appear to be more promising for thermoelectric applications.