Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing

Qian Gao; Dhruv Saxena; Fan Wang; Lan Fu; Sudha Mokkapati; Yanan Guo; Li Li; Jennifer Wong-Leung; Philippe Caroff; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/nl5021409

Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing

Nano Lett. 2014 Sep 10;14(9):5206-11. doi: 10.1021/nl5021409. Epub 2014 Aug 15.

Authors

Qian Gao¹, Dhruv Saxena, Fan Wang, Lan Fu, Sudha Mokkapati, Yanan Guo, Li Li, Jennifer Wong-Leung, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish

Affiliation

¹ Department of Electronic Materials Engineering, Research School of Physics and Engineering, ‡Australian National Fabrication Facility, Research School of Physics and Engineering, and §Centre for Advanced Microscopy, The Australian National University , Canberra, ACT 0200, Australia.

PMID: 25115241
DOI: 10.1021/nl5021409

Abstract

We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

Keywords: III−V semiconductors; nanowire laser; nanowires; quantum efficiency; selective-area metal−organic vapor-phase epitaxy; wurtzite.

Publication types

Research Support, Non-U.S. Gov't