Strongly correlated alignment of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors

Chang-Hyun Kim; Htay Hlaing; Marcia M Payne; Kevin G Yager; Yvan Bonnassieux; Gilles Horowitz; John E Anthony; Ioannis Kymissis

doi:10.1002/cphc.201402360

Strongly correlated alignment of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors

Chemphyschem. 2014 Oct 6;15(14):2913-6. doi: 10.1002/cphc.201402360. Epub 2014 Aug 8.

Authors

Chang-Hyun Kim¹, Htay Hlaing, Marcia M Payne, Kevin G Yager, Yvan Bonnassieux, Gilles Horowitz, John E Anthony, Ioannis Kymissis

Affiliation

¹ LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau (France). chang-hyun.kim@polytechnique.edu.

PMID: 25111007
DOI: 10.1002/cphc.201402360

Abstract

The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

Keywords: charge transport; crystallinity; diF-TEG-ADT; field-effect transistors; semiconductors.