Nanoelectronic memory based on trapped charge need to be small and fast, but fundamentally it faces a voltage-time dilemma because the requirement of a high-energy barrier for data retention under zero/low electrical stimuli is incompatible with the demand of a low-energy barrier for fast switching under a modest programming voltage. One solution is to embed an atomic-level lever of localized electron-phonon interaction to autonomously reconfigure trap-site's barrier in accordance to the electron-occupancy of the site. Here we demonstrate an atomically levered resistance-switching memory built on locally flexible amorphous nanometallic thin films: charge detrapping can be triggered by a mechanical force, the fastest one being a plasmonic Lorentz force induced by a nearby electron or positron bunch passing in 10(-13) s. The observation provided the first real-time evidence of an electron-phonon interaction in action, which enables nanometallic memory to turn on at a subpicosecond speed yet retain long-term memory, thus suitable for universal memory and other nanoelectron applications.
Keywords: Resistive switching memory; amorphous materials; electron−phonon interaction; metal insulator transition; plasmonic; pressure (effect).