Study of multi-level characteristics for 3D vertical resistive switching memory

Yue Bai; Huaqiang Wu; Riga Wu; Ye Zhang; Ning Deng; Zhiping Yu; He Qian

doi:10.1038/srep05780

Study of multi-level characteristics for 3D vertical resistive switching memory

Sci Rep. 2014 Jul 22:4:5780. doi: 10.1038/srep05780.

Authors

Yue Bai¹, Huaqiang Wu², Riga Wu³, Ye Zhang¹, Ning Deng¹, Zhiping Yu¹, He Qian²

Affiliations

¹ Institute of Microelectronics, Tsinghua University, Beijing, China, 100084.
² 1] Institute of Microelectronics, Tsinghua University, Beijing, China, 100084 [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing, China, 100084.
³ Inner Mongolia University, Hohhot, Inner Mongolia, China, 010021.

Abstract

Three-dimensional (3D) integration and multi-level cell (MLC) are two attractive technologies to achieve ultra-high density for mass storage applications. In this work, a three-layer 3D vertical AlOδ/Ta2O5-x/TaOy resistive random access memories were fabricated and characterized. The vertical cells in three layers show good uniformity and high performance (e.g. >1000X HRS/LRS windows, >10(10) endurance cycles, >10(4) s retention times at 125°C). Meanwhile, four level MLC is demonstrated with two operation strategies, current controlled scheme (CCS) and voltage controlled scheme (VCS). The switching mechanism of 3D vertical RRAM cells is studied based on temperature-dependent transport characteristics. Furthermore, the applicability of CCS and VCS in 3D vertical RRAM array is compared using resistor network circuit simulation.

Publication types

Research Support, Non-U.S. Gov't