A new scheme of making crystalline undulators was recently proposed and investigated theoretically by Andriy Kostyuk, concluding that a new type of crystalline undulator would be not only viable, but better than the previous scheme. This article describes the first experimental measurement of such a crystalline undulator, produced by using Si(1-x)Ge(x)-graded composition and measured at the Mainzer Microtron facility at beam energies of 600 and 855 MeV. We also present theoretical models developed to compare with the experimental data.