Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee; Danny Chua; Riley E Brandt; Sin Cheng Siah; Jian V Li; Jonathan P Mailoa; Sang Woon Lee; Roy G Gordon; Tonio Buonassisi

doi:10.1002/adma.201401054

Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells

Adv Mater. 2014 Jul 16;26(27):4704-10. doi: 10.1002/adma.201401054. Epub 2014 May 23.

Authors

Yun Seog Lee¹, Danny Chua, Riley E Brandt, Sin Cheng Siah, Jian V Li, Jonathan P Mailoa, Sang Woon Lee, Roy G Gordon, Tonio Buonassisi

Affiliation

¹ Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA.

PMID: 24862543
DOI: 10.1002/adma.201401054

Abstract

The power conversion efficiency of solar cells based on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

Keywords: charge transport; electro-optical materials; photovoltaic devices; solar cells; thin films.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Buffers
Copper / chemistry*
Electric Power Supplies*
Gallium / chemistry*
Models, Molecular
Molecular Conformation
Solar Energy*

Substances

Buffers
gallium oxide
Copper
Gallium
cuprous oxide