3D strain measurement in electronic devices using through-focal annular dark-field imaging

Suhyun Kim; Younheum Jung; Sungho Lee; Joong Jung Kim; Gwangseon Byun; Sunyoung Lee; Haebum Lee

doi:10.1016/j.ultramic.2014.04.010

3D strain measurement in electronic devices using through-focal annular dark-field imaging

Ultramicroscopy. 2014 Nov:146:1-5. doi: 10.1016/j.ultramic.2014.04.010. Epub 2014 May 11.

Authors

Suhyun Kim¹, Younheum Jung¹, Sungho Lee¹, Joong Jung Kim¹, Gwangseon Byun¹, Sunyoung Lee¹, Haebum Lee¹

Affiliation

¹ Memory Analysis Science & Engineering Group, Samsung Electronics, San #16, Hwasung-city, Gyeonggi-Do 445-701, Republic of Korea.

PMID: 24859824
DOI: 10.1016/j.ultramic.2014.04.010

Abstract

Spherical aberration correction in high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) allows us to form an electron probe with reduced depth of field. Using through-focal HAADF imaging, we experimentally demonstrated 3D strain measurement in a strained-channel transistor. The strain field distribution in the channel region was obtained by scanning an electron beam over a plan-view specimen. Furthermore, the decrease in the strain fields toward the silicon substrate was revealed at different focal planes with a 5-nm focal step. These results demonstrate that it is possible to reconstruct the 3D strain field in electronic devices.

Keywords: 3D strain measurement; High-angle annular dark-field; Through-focal series.