Relative refractory period in an excitable semiconductor laser

Phys Rev Lett. 2014 May 9;112(18):183902. doi: 10.1103/PhysRevLett.112.183902. Epub 2014 May 7.

Abstract

We report on experimental evidence of neuronlike excitable behavior in a micropillar laser with saturable absorber. We show that under a single pulsed perturbation the system exhibits subnanosecond response pulses and analyze the role of the laser bias pumping. Under a double pulsed excitation we study the absolute and relative refractory periods, similarly to what can be found in neural excitability, and interpret the results in terms of a dynamical inhibition mediated by the carrier dynamics. These measurements shed light on the analogy between optical and biological neurons and pave the way to fast spike-time coding based optical systems with a speed several orders of magnitude faster than their biological or electronic counterparts.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Lasers*
  • Models, Theoretical*
  • Semiconductors*