By taking semiconductors with different band-gap energies as the active layers and controlling the electron-hole recombination region through the electric field, bias-polarity dependent ultraviolet/visible switchable light-emitting devices have been realized in Au/MgO/Mg0.49Zn0.51O/MgxZn1-xO/n-ZnO structures, of which the emission bands can be switched from the ultraviolet region to the orange region by changing the polarity of the applied bias. The results reported here may provide a feasible idea to multicolor-switchable light-emitting devices.