The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery

Yisong Lei; Yuqing Yang; Yebing Liu; Hao Li; Guanquan Wang; Rui Hu; Xiaoling Xiong; Shunzhong Luo

doi:10.1016/j.apradiso.2014.03.027

The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery

Appl Radiat Isot. 2014 Aug:90:165-9. doi: 10.1016/j.apradiso.2014.03.027. Epub 2014 Apr 5.

Authors

Yisong Lei¹, Yuqing Yang¹, Yebing Liu¹, Hao Li¹, Guanquan Wang¹, Rui Hu¹, Xiaoling Xiong¹, Shunzhong Luo²

Affiliations

¹ Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China.
² Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China. Electronic address: leiyisongm3@163.com.

PMID: 24751350
DOI: 10.1016/j.apradiso.2014.03.027

Abstract

A tritium beta-voltaic battery using a crystalline silicon convertor composed of (100)Si/SiO2/Si3N4 film degrades remarkably with radiation from a high intensity titanium tritide film. Simulation and experiments were carried out to investigate the main factor causing the degradation. The radiation damages mainly comes from the x-ray emitted from the titanium tritide film and beta particle can relieve the damages. The x-ray radiation induced positive charges in the SiO2 film destroying the output property of the PN diode with the induction of an electric field.

Keywords: ESR; Geant4; Radiation damage; SiO(2)–Si; Soft x-ray; Tritium beta-voltaic.

Publication types

Research Support, Non-U.S. Gov't