Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Galo A Torres Sevilla; Jhonathan P Rojas; Hossain M Fahad; Aftab M Hussain; Rawan Ghanem; Casey E Smith; Muhammad M Hussain

doi:10.1002/adma.201305309

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Adv Mater. 2014 May;26(18):2794-9. doi: 10.1002/adma.201305309. Epub 2014 Feb 22.

Authors

Galo A Torres Sevilla¹, Jhonathan P Rojas, Hossain M Fahad, Aftab M Hussain, Rawan Ghanem, Casey E Smith, Muhammad M Hussain

Affiliation

¹ Integrated Nanotechnology Lab, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.

PMID: 24677501
DOI: 10.1002/adma.201305309

Abstract

An industry standard 8'' silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.

Keywords: FinFET; brain-architecture inspired computation; flexible; silicon; transparent.

Publication types

Research Support, Non-U.S. Gov't