A new near-field processing method by femtosecond laser ablation using photoresist enhancing masks is numerically and experimentally investigated. Periodical structures with 2 μm pitch, 1 μm width and 300 nm height, created in polymethyl methacrylate photoresist by e-beam lithography, were used to intensify the incident laser radiation. The near-field distribution and the intensification factor of the optical radiation were computed using the Finite-Difference-Time-Domain numerical simulations. The pattern of the photoresist mask was imprinted on the surface of a silicon wafer. Using a single infrared femtosecond laser pulse, uniform and continuum grooves with the width in the range of 250 nm were obtained on large silicon surface.