Combination with semiconductors is a promising approach to the realization of broadband excitation of light conversion materials based on rare earth compounds, to boost the energy efficiency of silicon solar cells. Cd(1-x)Zn(x)S is a wide bandgap semiconductor with large exciton binding energy. By changing its composition, the bandgap of Cd(1-x)Zn(x)S can be tuned to match the absorption of trivalent lanthanide (Ln) ions, which makes it a competent energy donor for the Ln(3+)-Yb(3+) couple. In this work, we designed a clean route to a broadband down-converter based on a core-shell-like Y2O3:[(Tb(3+)-Yb(3+)), Li(+)]/Cd0.81Zn0.19S (CdZnS) heterostructure. By hot-pressing and subsequent annealing of a Y2O3:[(Tb(3+)-Yb(3+)), Li(+)]/CdZnS mixture, highly pure CdZnS was sublimated and deposited on the Y2O3:[(Tb(3+)-Yb(3+)), Li(+)] grains while maintaining the original composition of the precursor. The CdZnS shell acted as a light absorber and energy donor for the Tb(3+)-Yb(3+) quantum cutting couple. Because the use of solvents was avoided during the formation of the heterostructures, few impurities were incorporated into the samples, and the non-radiative transition was therefore markedly suppressed. The Y2O3:[(Tb(3+)-Yb(3+)), Li(+)]/CdZnS heterostructures possess strong near-infrared (NIR) luminescence from Yb(3+). Broadband down-conversion to the Yb(3+) NIR emission was obtained in a wide range of 250-650 nm.