The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor

Chem Commun (Camb). 2014 Apr 21;50(31):4112-4. doi: 10.1039/c4cc00749b.

Abstract

A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na(+) ions was used to create a field-effect transistor based memory device. Addition of Na(+) ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Microscopy, Electron, Transmission
  • Nanowires / chemistry*
  • Nanowires / ultrastructure
  • Silicon / chemistry*
  • Sodium / chemistry*
  • Transistors, Electronic*

Substances

  • Sodium
  • Silicon