Porous Silicon-Based Quantum Dot Broad Spectrum Radiation Detector

J Instrum. 2011 Jan 11:6:C01027. doi: 10.1088/1748-0221/6/01/C01027.

Abstract

Silicon is a convenient and inexpensive platform for radiation detection, but has low stopping power for x-rays and gamma-rays with high energy (e.g., 100 keV, as used in computed tomography and digital radiography, or 1 MeV, as desired for detection of nuclear materials). We have effectively increased the stopping power of silicon detectors by producing a layer of porous or micro-machined silicon, and infusing this layer with semiconductor quantum dots made of electron-dense materials. Results of prototype detectors show sensitivity to infrared, visible light, and x-rays, with dark current of less than 1 nA/mm2.

Keywords: infrared; lead sulfide; light; multispectrum; nanoparticles; porous silicon; quantum dot; sensor; x-ray.